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| Epi-Ready Sapphire Wafer | |||
| Diameter | 50.8±0.1mm | ||
| Thickness | 430±10μm | ||
| Orientation | C-plane 0.2°to M-axis ± 0.1° | ||
| C-plane 0°to A-axis ± 0.1° | |||
| Orientation flat | 16.0±1mm | ||
| Primary flat location | A-axis ± 0.2° | ||
| Front side surface | Epi-Ready Polished | ||
| Surface Roughness | Ra<0.2nm | ||
| Back side surface | 0.8—1.2μ | ||
| TTV | <10μ | ||
| BOW | <10μ | ||
| Package | Clean Room,Nitrogen Atmosphere | ||
| 研 磨 片 | |||
| Orientation | C-plane 0.2°to M-axis ±0.1° | ||
| C-plane 0°to A-axis ± 0.1° | |||
| Diameter | 50.8 ± 0.1mm | ||
| Thickness | 0.49 ± 0.05mm | ||
| TTV | 15um | ||
| Warp | 15um | ||
| Primary Flat | Length | 16.0±1.0mm | |
| ? | Orientation | A-plane±0.2° | |
| Visual appearance | No cracks,pits,edge chipping | ||
| | | | |
| 切 割 片 | ||
| Orientation | C-plane 0.2°to M-axis ±0.1° | |
| C-plane 0°to A-axis ± 0.1° | ||
| Diameter | 50.8± 0.1mm | |
| Thickness | 0.52 ± 0.03mm | |
| TTV | 20um | |
| Warp | <40um | |
| Primary Flat | Length | 16.0±1.0mm |
| ? | Orientation | A-plane±0.2° |
| Visual appearance | No cracks,pits,edge chipping |