商铺名称：哈尔滨特博科技有限公司
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商品详情
特博科技有限公司是英国ICEMOSTECH公司在中国的独家代理，高品质的SOI wafer和
SuperJunction MOSFET是ICEMOS的主营产品，凭借15年的制造经验ICEMOS在世界范围内有着
众多的客户群体，分别在欧洲，美国，日本、韩国和中东设有代理商。
SOI wafer尺寸: 4”(100mm）, 5”（125mm）, 6”（150mm） and? 8"（200mm）
SOI Spec. 规格：
???? 1-??? Bonded SOI?wafer (绝缘硅上键合硅片）
????????????????????????? For 4”(100mm）, 5”（125mm）, 6”（150mm）
?????????????????????---- Handle wafer?minimum 300um maximum 1000um,
?????????????????????---- Buried Oxide, minimum 0.1 um, maximum 4 um,
???????????????????? ----?Device layer minimum 2 um, max 500 um.
?????????????????????????
??????????????????????????For 8"（200mm）
?????????????????????----?Handle thickness minimum 500um and maximum 675um,
?????????????????????----?Buried Oxide minimum 0.1 um, maximum 4 um,
?????????????????????----?Device layer minimum 5 um, maximum 500 um.
?
2-???????Si-Si direct wafer bonding (replacement for epi) 硅-硅直接键合，可替代外延片
?
????? 100mm, 125mm, 150mm and 200mm, thickness as specified above.
?
3-???????Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
????? Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)
???? ?and finally Through Silicon Via (TSV)???
?
?----? Cavity SOI - Bonded SOI or Silicon silicon DWB wafers with cavities performed within the wafer
?---- Multiple SOI 2 or 3 or more layers of SOI designed around your process
?---- Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated
?
???? 4-?????SOI +?Trench & Refill
??
???Features
???? (DI) or junction isolation
5-???Superjunction MOSFET
?
?
?
?
??? 为了一些客户的紧急需求，英国工厂存有部分现货，欢迎您来电咨询更详细的产品信息！
?
????????
???
SuperJunction MOSFET是ICEMOS的主营产品，凭借15年的制造经验ICEMOS在世界范围内有着
众多的客户群体，分别在欧洲，美国，日本、韩国和中东设有代理商。
SOI wafer尺寸: 4”(100mm）, 5”（125mm）, 6”（150mm） and? 8"（200mm）
SOI Spec. 规格：
???? 1-??? Bonded SOI?wafer (绝缘硅上键合硅片）
????????????????????????? For 4”(100mm）, 5”（125mm）, 6”（150mm）
?????????????????????---- Handle wafer?minimum 300um maximum 1000um,
?????????????????????---- Buried Oxide, minimum 0.1 um, maximum 4 um,
???????????????????? ----?Device layer minimum 2 um, max 500 um.
?????????????????????????
??????????????????????????For 8"（200mm）
?????????????????????----?Handle thickness minimum 500um and maximum 675um,
?????????????????????----?Buried Oxide minimum 0.1 um, maximum 4 um,
?????????????????????----?Device layer minimum 5 um, maximum 500 um.
?
2-???????Si-Si direct wafer bonding (replacement for epi) 硅-硅直接键合，可替代外延片
?
????? 100mm, 125mm, 150mm and 200mm, thickness as specified above.
?
3-???????Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
????? Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)
???? ?and finally Through Silicon Via (TSV)???
?
?----? Cavity SOI - Bonded SOI or Silicon silicon DWB wafers with cavities performed within the wafer
?---- Multiple SOI 2 or 3 or more layers of SOI designed around your process
?---- Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated
?
???? 4-?????SOI +?Trench & Refill
??
???Features
- Significant die shrink compared to conventional dielectric isolation
???? (DI) or junction isolation
- Bulk quality top silicon layer Total device-to-device isolation Lower substrate capacitance than bulk Fully flexible specification on SOI, Trench and refill parameters
5-???Superjunction MOSFET
?
?
?
?
??? 为了一些客户的紧急需求，英国工厂存有部分现货，欢迎您来电咨询更详细的产品信息！
?
????????
???
